摘要
红外吸收谱分析表明，聚硅烷Ｐｏｌｙｍｅｔｈｙｌｐｈｅｎｅｔｈｙｌｓｉｌａｎｅ（ＰＭＰＥＳ）在氧等离子体处理后转变成ＰＳｉＯｘ膜，ＰＳｉＯｘ中的ｘ在１．５－２．０之间，其高频Ｃ－Ｖ特性曲线的平带电压为正，大小与氧等离子处理条件和ＰＭＰＥＳ厚度有关。
From the analysis of infrared (IR) absorption spectrum,it was showed that the P SiO x film was formed when polymenthyl phenethyl silane (PMPES) was treated with O 2-Plasma, where x ranged from 1 5 to 2.0. This film has a positive flat band voltage, on the high frequcncy C-V characteristic curve and its value is dependent on the condition of O 2-plasma treatment and the thickness of PMPES film.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第5期318-319,323,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金
