HgCdTe注入工艺研究

STUDY ON IMPLANTIVE TECHNOLOGY OF HgCdTe

HgCdTe是制造焦平面阵列最受关注的材料,注入掺杂又是研制焦平面阵列极有前途的工艺方法。但HgCdTe特性"娇嫩",如Hg易分凝,因此研究这种材料的注入工艺成为首要的条件。考察了注入功率引起样品升温的影响,研究了不同注入能量、束流密度、剂量、元素等与材料之间性能变化的关系。通过离子注入HgCdTe的热学分析,实验研究了HgCdTe注入的工艺条件,束流与注入能量是Hg分凝的主要因素。

HgCdTe is an interested material for IR FPA. Ion implantation is a very important process in fabricating IRFPA. It is considered that the performance of HgCdTe material is related to the different implantive parameters and sample temperature. Based on the thermological analysis of HgCdTe by ion implantation, the implantive process for HgCdTe at the experiment is investigated. It shows that the ion beam currents Ⅰ and the implantive energies E are the main factors on the Hg segregation.