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3mm波雪崩管集成振荡器设计

Design of a 3 mm IMPATT Integrated Oscillator
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摘要 描述了一种3mm雪崩管集成振荡器。该振荡器由雪崩二极管,微带谐振装置,鳍线过渡段组成。通过对雪崩管振荡器的理论分析,利用电路设计软件ADS与三维仿真软件HFSS仿真优化,设计出了频率为95GHz的雪崩管集成振荡器。 This paper describes a 3 mm integrated IMPATT oscillator, which is consisted of an IMPATT diode, microstrip resonator device and fin-line transition. With the theory analysis and research, through simulation and optimization by ADS and HFSS, we designed the IMPATT integrated oscillator that the frequency is 95 GHz.
机构地区 电子科技大学
出处 《真空电子技术》 2009年第5期19-21,共3页 Vacuum Electronics
关键词 毫米波 雪崩二极管 微带集成振荡器 仿真 优化 Millimeter-wave IMPATT diode Integrated microstrip oscillator Simulation Optimization
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二级参考文献5

  • 1Joel W Gannett, Leon O Chua. A nonlinear circuit model for IMPATT diodes. IEEE Trans on circuit and systems,1978,25 (5) :299 ~ 308.
  • 2Bevan D Bates. A comparison of IMPATT oscillator power and frequency above 100 GHz with results derived from theoretical models. IEEE Trans on MTT, 1984,32(10):1394 ~ 1398.
  • 3Ray U C,et al. A practical approach to the design of a W-band impatt oscillator. Microwave Journal, 1989, 28(11) :157 ~ 162.
  • 4Christophe Dalle, et al. Flat doping profile double-drift silicon Impatt for reliable CW high-power high-efficiency generation in the 94-GHz window. IEEE Trans on MTT,1990,37(1) :227 ~ 236.
  • 5Stephen A Maas. Nonlinear microwave circuits. USA:IEEE press, 1997.

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