摘要
本文比较详细地研究射频溅射Sn膜—热处理氧化制备SnO_2薄膜的工艺因素对薄膜结构的影响,得到了采用该新工艺制备SnO_2薄膜的最佳条件:首先采用350W×0.10Pa×20min的射频溅射工艺制备 β-Sn膜;然后采用在550～650℃温度条件下保温2～3h的热处理工艺制备出SnO_2薄膜。X-射线衍射实验结果表明,在该工艺条件下可以得到非常细小均匀的纳米级SnO_2晶体结构,为薄膜型SnO_2气敏元件新工艺研究提供了基础性资料。
The effects of the technology factors of the β-Sn thin-film prepared by RF-sputtering and of the SnO2 thin-film prepared by heat-treatment on the microstructure of the thin-film were studied this paper, and results showed that the best technology of RF-sputtering is 350W×0.1Pa×20min and the best technology of the heat-treatment is (550~650)℃×(2~3)h. The X-ray experiments indicated that the thin-film is tiny and uniform SnO2 crystal structure by use of the new technology. It provides the basic information for investigating the new technology on manufacturing the SnO2 thin-film sensors.
出处
《传感器世界》
1998年第11期10-15,共6页
Sensor World
