摘要
采用负阻电路以及我们自行构造的模型设计的集成化平面肖特基变容管,用GaAsMMIC技术实现了L波段大调频范围压控带通滤波器该滤波器具有200MHk的3dB带宽,调频范围1.64GHz~1.0GHz、计约600MHz并具有足够的带外抑制比.全部偏置电路均在片上,芯片共占面积1.6×1.8mm2.
A second order large tuning-range bandpass active filter has been developed with GaAs MMIC technique using negative resistance circuits and integrated planar Schottky diodes designed by ourselves. The filter has a 200MHz 3 dB-bandwidth and a 600MHz tuning-range of centre freqency, from 1. 6GHz to 1GHz, and occupies an area of 1. 6 ×1. 8mm2 on the wafer including all biasing elements.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第11期107-109,共3页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
GaAs
MMIC
压控
有源滤波器
负阻电器
砷化镓
GaAs MMIC, Tunable active filter, Negative resistance circuit, Integrated planar schottky diode