离子束溅射制备CuInSe_2薄膜的研究

Growth of CuInSe_2 Films by Ion Beam Sputtering

利用离子束溅射沉积技术,设计三元复合靶,直接制备CuInSe2(CIS)薄膜。通过X射线衍射仪(XRD)、原子力显微镜(AFM)和分光光度计检测在不同衬底温度和退火温度条件下制备的CIS薄膜的微结构、表面形貌和光学性能。实验结果表明:使用离子束溅射沉积技术制备的CIS薄膜具有黄铜矿结构,在一定的条件下,适当温度的热处理可以制备结构紧密、颗粒均匀、致密性和结晶性良好的CIS薄膜,具有强烈的单一晶向生长现象。

The CuInSe2（CIS） films were grown on k9 glass substrate by ion beam sputtering of a fan-shaped ternary compound target. The impacts of the film growth conditions, such as the substrate temperature, annealing temperature and annealing time, and deposition rate, on the quality of the CIS film were studied. The surface microstructures and optical properties were characterized with X-ray diffraction （XRD）,atomic force microscopy （AFM） and optical probes. The resuits show that the annealing temperature strongly affects the chalcopyrite-structured CIS films. For example, under the proper conditions, the optimized annealing temperature resulted in high quality, compact CIS films with uniform crystal grains, grown in a preferential orientation.