高K栅介质HfSi_xO_y薄膜的制备工艺与结构分析

Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics

采用射频磁控溅射法制备HfSixOy薄膜,系统研究工艺参数对HfSixOy薄膜沉积速率的影响规律。对沉积态和退火HfO2和HfSixOy薄膜的结构进行了对比分析。结果表明:HfSixOy薄膜的沉积速率随射频功率、Ar气体流量和粘贴Si面积的增大而增大,随溅射气压的增大而减小。衬底未加热时,制备的HfSixOy和HfO2薄膜均呈非晶态,随着衬底加热温度的上升,HfO2薄膜呈多晶态,而HfSixOy薄膜呈非晶态。HfSixOy薄膜在800℃退火后仍呈非晶态,而HfO2薄膜在400℃退火后已明显晶化,这表明HfSixOy薄膜具有较高的热稳定性。

HfSixOy thin film has been prepared by using radiation frequency （RF） magnetron sputtering. The influence of process parameters on the deposition rate of HtSixOy film was studied systematically. The structures of as-deposited HfO2 and HfSixOy films have been investigated, and analyzed for the films after annealing. The results show that the deposition rate of HfSixOy film increases with the increase of RF power, Ar gas flow and area of Si, while decreases with the increase of sputtering pressure. The results of structure analysis show that the as-deposited HfO2 and HfSixOy films deposited at room temperature are amorphous. With the substrate temperature increasing, the HfO2 film crystallizes hut HfSixOy film is still amorphous. The HfSixOy film remains amorphous after annealing at 800℃ but HfO2 thin film crystallizes obviously after annealing at 400℃. It indicates that the thermal stability of HfSixOy thin film is better than that of HfO2 film.