摘要
我们研究了Pt-ZnO纳米肖特基接触的电学特性.采用二步湿化学法制备高取向的ZnO纳米棒阵列,在原子力显微镜下将镀Pt导电探针施加在ZnO纳米棒的端面,形成Pt-ZnO纳米接触.I-V特性曲线表明Pt-ZnO纳米接触形成肖特基二极管,具有明显的整流效应,理想因子为3.2,反向击穿电压高于?10V.分析指出,施加偏压后在Pt-ZnO纳米接触点附近的ZnO半导体内形成较高电场,导致势垒厚度减小,使电子从ZnO到Pt的隧穿概率增大,因而具有较高的理想因子.
Electrical characteristics of Pt-ZnO Schottky nano-contact were studied. Well aligned ZnO nano- rods array was synthesized by two-step of wet-chemical method. Pt coated conducting tip of atomic force microscope was placed on the head face of ZnO nanorod, which formed Pt-ZnO nano-contact. I-V curve showed Pt-ZnO nano-contact exhibited rectifying effect, like Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10V. The study suggested a high electric field was induced on the ZnO beneath the contact point when a bias voltage was applied, hence, the Schottky barrier thickness decreased, resulting in easy tunneling across Pt-ZnO interface and large ideality factor.
基金
国家高技术研究发展计划资助项目(编号:2009AA01Z114)
