Si纳米线场效应晶体管研究进展

Progress in Silicon Nanowire Field Effect Transistors

从Si纳米线场效应晶体管(SiNWFET)的结构原理、Si纳米线的制作工艺以及器件电学性能的改善措施三个方面介绍了SiNWFET的研究进展。通过分析SiNWFET的漏极电压对沟道电势的影响,表明SiNWFET自身的细沟道和围栅结构对于改善亚阈值特性和抑制短沟道效应起着关键作用。针对Si纳米线的制备,介绍了光刻、刻蚀与热氧化等自上而下的方法和气-液-固生长这种自下而上的方法。分析了SiNWFET的电学性能,探讨了为改善电学性能而进行的器件结构和工艺的改进,包括选择沟道取向,采用多条纳米线、应变纳米线或新材料作为沟道以及减小源-漏接触电阻等措施。最后对SiNWFET所面临的挑战和前景作了展望。

The study of silicon nanowire field effect transistors（SiNWFETs）is reviewed from three aspects,i.e. the theory of SiNWFETs,the fabrication of silicon nanowires and approaches for electrical characteristic improvement. The effect of the drain electrode voltage on the channel electric potential of a SiNWFET is analyzed,the result indicates that the thin channel and gate all around structure of the SiNWFET play an important role in subthreshold characteristic improvement and short channel effect suppression. On the fabrication of silicon nanowires,the top-down strategy,i.e.lithography,etching and thermal oxidation technology,and the bottom-up strategy of vapor-liquid-solid （VLS） growth technology are introduced. The electrical characteristics of SiNWFETs are described and the methods for characteristic improvement are discussed,which relate to channel orientation,multi-nanowire channel,strain nanowire channel,new channel material and source-drain contact. In the end,the challenges and opportunities of SiNWFETs are outlined.