摘要
Based on the temperature dependence of the Arrhenius law, an HSPICE compact module using Verilog-A language for phase change memory （PCM） is presented. In the model of this HSPICE compact module, the basic theory that the resistance of the amorphous semiconductor has relations with the activation energy and temperature is used, and an assumption that this theory can be expanded to describe the crystalline semiconductor is employed. Moreover, since an objective reality that the resistance of the semiconductor determines the temperature and the temperature affects the resistance inversely is inevitable, coupling with such positive feedback, this model can reproduce the real-time characteristics of the memory cell accurately. The simulation results show that this model can reproduce the features of the PCM cell well. It can be used in the PCM circuit design and further analysis.
Based on the temperature dependence of the Arrhenius law, an HSPICE compact module using Verilog-A language for phase change memory （PCM） is presented. In the model of this HSPICE compact module, the basic theory that the resistance of the amorphous semiconductor has relations with the activation energy and temperature is used, and an assumption that this theory can be expanded to describe the crystalline semiconductor is employed. Moreover, since an objective reality that the resistance of the semiconductor determines the temperature and the temperature affects the resistance inversely is inevitable, coupling with such positive feedback, this model can reproduce the real-time characteristics of the memory cell accurately. The simulation results show that this model can reproduce the features of the PCM cell well. It can be used in the PCM circuit design and further analysis.
