摘要
采用射频磁控溅射方法在石英玻璃基片上制备ITO薄膜,结合薄膜面电阻和微观结构,采用红外、紫外光谱特征分析薄膜的导电机理。结果表明:在相同氧分压下随温度升高紫外吸收波长向短波方向移动,光学带隙展宽,红外等离子共振吸收波长向短波方向移动;随氧分压增加紫外吸收波长明显向长波方向移动,光学带隙变窄,红外等离子共振吸收波长向长波方向移动;根据Burstein-Moss移动理论及XRD、AFM结果,说明温度升高改善ITO薄膜结晶程度,提高Sn掺杂效率,载流子浓度增加;相同温度条件下随氧分压的增加使氧空位减少,载流子减少,并且氧分压的影响更为显著。
In this article indium-tin-oxide （ITO） films are deposited on quartz glass substrates by RF-magnetron sputtering. The films are examined by XRD, AFM, and UV/NIR spectroscopy. The conductivity mechanism of ITO film is analyzed. The results show that ITO films deposited at high suhstrate temperature, the carrier is given by tin doping, with increasing temperature the band gap shifts towards shorter wavelength and the carrier concentration increasing, as the substrate temperature at 100℃ the carriers of ITO films are mainly oxygen vacancies, the carrier concentration decreases and the band gap shifts towards longer wavelength with the oxygen partial pressure increasing.
出处
《武汉理工大学学报》
CAS
CSCD
北大核心
2009年第22期84-87,共4页
Journal of Wuhan University of Technology
