摘要
本文用真空蒸发法在玻璃衬底上蒸镀Cu-In-Al多层膜,后采用真空硒化退火获得Al含量不同的Cu(In1-xAlx)Se2多晶薄膜。通过SEM和XRD微观形貌结构分析发现,薄膜中Al的含量对薄膜的表面形貌和结构有一定影响。Al/(In+Al)比例越大,越容易获得尺寸较小、分布比较均匀的晶粒。同时Al含量对薄膜的方阻有一定的影响,Al含量越高,方阻越大。而且Al含量的多少可以调节薄膜的禁带宽度的大小。
CIA （Cu-In-Al） multilayers were deposited on glass substrates via vacuum evaporation, then theCu（In1-xAlx）Se2 polycrystalline thin films with different Al contents were prepared after vacuum selenylation and annealing processes. By SEM images and XRD patterns it was fornd that the Al content in the thin films affects their surface morphology and microstructure to a certain extent. The greater the content ratio Al/（In＋Al）, the smaller the grain size and the more uniform the grain distribution. On the other hand, the Al content also affects the sheet resistance of the thin film, ie., the higher the Al content, the higher the sheet resistance. And the forbidden bandwidth of the thin film can be adjusted by controlling the Al content.
出处
《真空》
CAS
北大核心
2009年第6期51-54,共4页
Vacuum
