摘要
采用金属有机化学气相沉积法在Si(111)衬底上生长了AlN外延层。高分辨透射电子显微镜显示在AlN/Si界面处存在非晶层,俄歇电子能谱测试表明Si有很强的扩散,拉曼光谱测试表明存在Si-N键,另外光电子能谱分析表明非晶层中存在Si_3N_4。研究认为MOCVD高温生长造成Si的大量扩散是非晶层存在的主要原因,同时非晶Si_3N_4层也将促使AlN层呈岛状生长。
AlN epilayer is grown on Si（111） by metal organic chemical vapour deposition（MOCVD）. High resolution transmission electron microscopy shows the amorphous layer in the interface of AlN/Si. Meanwhile,Si atom diffusion is detected by auger electron spectrum. Raman spectrum and X-ray photoelectron spectroscopy show the existence of Si-N bond and Si3N4 in the amorphous layer, which will promote island growth for AlN layer. It can be assumed that the higher temperature causing Si atom diffusion to replace Al atom is the main reason for the amorphous layer formation.
