摘要
利用射频磁控溅射法,采用氧化锌铝(98%ZnO+2%Al_2O_3)为靶材,在普通载玻片上制备了ZAO(ZnO:Al)薄膜,研究了溅射功率及溅射气压对薄膜晶体结构、电学和光学性能的影响。采用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,采用分光光度计和电阻率测试仪对薄膜的光电学性能进行了测试。结果表明,当溅射功率为120W、衬底温度为300℃、工作气压为0.5Pa时制得的薄膜具有良好的光电学性能,可见光平均透过率为88.21%,电阻率为8.28×10^(-4)Ω·cm。
Thin films of transparent conductive aluminum-doped ZnO are deposited on the glass substate by the RF magnetron sputtering method with target of AlZnO（98%ZnO＋2%Al2O3 ）, the effects of process parameters on structure and optical and electronical properties of ZnO ： Al thin films are investigated by XRD, SEM, UV-visble spectrophotometry and four-point probe method. Experimental results indicate that the films prepared at substrate tempreture of 300℃ with RF power of 120W and working pressure of 0. 5 Pa have good optical and electronical properties,average transmittance of 88. 21% in the range of visible light and resistivities of 8.28×10^-4Ω·cm.
基金
国家自然科学基金重大资助项目(90407023)
关键词
磁控溅射
陶瓷靶材
电阻率
透过率
ZNO:AL薄膜
RF magnetron sputtering, ceramic target, resistivities, transmittance, ZnO ： Al films
