摘要
采用石英晶体微天平实时监测薄膜生长速率,通过控制衬底温度与薄膜生长速率,在柔性ITO导电衬底上真空蒸发沉积了铜酞菁薄膜。X射线衍射分析表明,适当提高衬底温度与薄膜生长速率,可促进薄膜的有序生长。当衬底温度为90℃,生长速率为10nm/min时,薄膜的有序度最高,薄膜晶型呈(相和(200)晶面。
Through controlling substrate temperature and growth rate detected by quartz crystal microbalance measurement,CuPc films were deposited on flexible ITO substrate.X-ray diffraction investigation shown that the growth of CuPc films were strongly affected by substrate temperature and growth rate.Well-ordered CuPc film could be deposited at substrate temperature 90℃ and growth rate 10nm/min.Crystal structure of the as-prepared CuPc film was existed as(phase and(200) plane.
出处
《化工新型材料》
CAS
CSCD
北大核心
2009年第11期40-42,共3页
New Chemical Materials
基金
国家自然科学基金资助项目(20876182
20576141)
广东省自然科学基金资助项目(7003705)
关键词
铜酞菁
X射线衍射
柔性衬底
真空蒸发沉积
有序薄膜
copper phthalocyanine
X-ray diffraction
flexible substrate
vacuum evaporation deposition
well-ordered film