摘要
采用sol-gel法在玻璃衬底上制备ATO(SnO2∶Sb)薄膜,并用XRD、SEM、紫外-可见光谱和光致发光对薄膜进行了表征,研究了ATO薄膜的结构和光学性能。结果表明:ATO薄膜微晶晶相与SnO2一致,仍然是四方金红石结构;ATO薄膜在可见光区的透过率超过80%,当r(Sb∶Sn)为0.15时,ATO薄膜的透过率最高达87%;ATO薄膜在344~380nm处有一个很强的紫外-紫光发射带,随着Sb掺杂量的增加,发射峰逐渐变强,在r(Sb∶Sn)为0.25时,发射峰相对强度达302.4。
Sb-doped SnO2(ATO) thin films were prepared on glass substrates by sol-gel method. The thin films were characterized by XRD, SEM, UV-Vis spectroscopy and photoluminescence(PL). The structure and optical properties of ATO thin films were studied. The results show that the microcrystalline of ATO thin films is the same as SnO2 of quartet rutile structure. The mean transmittances of the ATO thin films are higher than 80% in visible region, ATO thin films doped with Sb(r(Sb : Sn)=0.15)have high transmittance of 87%. ATO thin films have strong luminescence band of UV-PL in 344-380 nm. The luminescence peak becomes stronger with the increase of Sb doping amount. When r(Sb : Sn) is 0.25, the relative intensity of luminescence peak is up to 302.4.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第12期27-29,共3页
Electronic Components And Materials