期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout
原文传递
导出
摘要 This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted dr/ft regions. The breakdown voltages for N＋N and P＋N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted dr/ft regions. The breakdown voltages for N＋N and P＋N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications.
作者 郭宇锋 王志功 许健
机构地区 Institute of RF-& OE-ICs Nanjing University of Posts and Telecommunications Department of Computer Science & Information Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第11期51-54,共4页 半导体学报（英文版）
基金 Project supported by the National Natural Science Foundation of China (No.60806027) the China Postdoctoral Science Foundation (No.20070411013) the Natural Science Foundation of Jiangsu Province,China (No.BK2007605) the State Key Laboratory of Electronic Thin Films and Integrated Devices (No.KF2007001)
关键词 SOI three dimensional breakdown voltage： model： RESURF SOI three dimensional breakdown voltage： model： RESURF
分类号 TN323.4 [电子电信—物理电子学]
  • 相关文献

参考文献10

  • 1Hidalgo S, Fernandez J, Godignon P, et al. Power lateral DMOS transistor test structures. Proc ICMTS Conf, 1993:33.
  • 2Luo Xiaorong, Zhang Bo, Li Zhaoji, et al. A novel 700-V SOI LDMOS with double-sided trench. IEEE Electron Device Lett, 2007, 28(5): 422.
  • 3Guo Yufeng, Li Zhaoji, Zhang Bo. A new analytical model for optimizing SOI LDMOS with step doped drift region. Microelectron J, 2006, 37:861.
  • 4Guo Yufeng, Li Zhaoji, Zhang Bo, et al. Fabrication of a novel SOI material with non-planar buried oxide layer. Chinese Journal of Semiconductors, 2007, 28(9): 1415.
  • 5Chung S K, Han S Y. Analytical model for the surface field distribution of SOl RESURF device. IEEE Trans Electron Devices, 1998, 45(6):1374.
  • 6Li W H, Luo J S. A novel analytical physical model for thin film SOl RESURF structure based on 2-D Poisson equation. Proc ISPSD, 1998:724.
  • 7Merchant S. Analytical model for the electric field distribution in SOI RESURF and TMBS structures. IEEE Trans Electron Devices, 1999, 46(6): 1264.
  • 8Guo Yafeng, Li Zbaoji, Zbang Bo. A new two dimensional analytical breakdown model of SOI RESURF devices. Proc ICCCAS, 2007:1278.
  • 9Suzuki Y, Kishida T, Takano H, etal. 3-D effect of cell designs on the breakdown voltage of power SOI-LDMOS. Proc IEEE Inter SOI Conf, 1996:134.
  • 10Baliga B J. Power semiconductor devices. Boston: International Thomson Publishing, 1996.
Journal of Semiconductors
2009年 第11期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部