SiO_2介质材料辐射损伤测试结构设计

Test Structure Design of Radiation Damage on SiO_2 Dielectric Material

为研究CMOS器件与电路的辐射效应,文中提出了SiO2介质材料辐射损伤测试结构的设计思想。针对栅氧化层和场氧化层在器件中位置、作用和结构上的差异,分别设计了用于场氧化层测试的多栅结构和用于栅氧化层测试的封闭栅结构以及Dog-Bone栅结构。为CMOS器件辐射损伤机理及辐射加固提供了新的样品和研究方法。

Design method of SiO2 dielectric material test structure is proposed for investigating the effects of CMOS devices and circuit. Based on the differences in position, function and structures between the field oxide and gate oxide in devices, three test structures are proposed i. e. the multi-finger gate structure for field oxide, the enclosed gate layout for gate oxide and Dog-Bone gate structure. New samples and research method are produced to the study of the radiation damage mechanism and radiation-harden technique of CMOS devices.