Ce掺杂的WO_3薄膜的电学性质

Electrical Properties of Ce-Doped WO_3 Thin Film

在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO3薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.

Ce-doped WO3 thin films were fabricated by DC reactive magnetron sputtering on glass substrates and annealed in dry air at 550℃ for 1 h. The effects of sputtering power on electrical properties of the film were investigated. X-ray diffraction （XRD） and scanning electron microscopy （SEM） analyses were performed to characterize the film. The experimental results show that Ce-doping caused WO3 crystals to grow along the preferred orientation （b-axis） with island structures, and the film displayed the highest nonlinear coefficient of 7.92 when the sputtering powers for Ce and W were 40 W and 160 W, respectively.