GaN基512×1元紫外长线列焦平面探测器组件

GaN-based 512×1 Ultroviolet linear Focal Plane Arrays

介绍了GaN基512×1元紫外长线列焦平面探测器组件的研制过程，并给出了器件的性能。利用金属有机化学气相沉积（MOCVD）方法生长的多层A1GaN外延材料，通过刻蚀、钝化、欧姆接触电极制备等工艺，制作了256×1的背照射AlGaN紫外探测芯片。并对该芯片进行了I-V特性、响应光谱等测试，得到芯片的暗电流Id为4．22×10^-12A、零压电阻风为1．01×10^10Ω，响应波段为305～365nm，响应率约为0．12A／W。该AlGaN探测芯片与电容反馈互阻抗放大器（CTIA）结构的读出电路互连成为一个256模块，两个256模块经过拼接、封装后制备出512×1元紫外长线列焦平面探测器组件。测量室温（300K）时焦平面组件（实际524元）的响应，平均电压响应率为1．8×10^8V／w，其盲元率为9．0％，响应不均匀性为17．8％，359nm处的平均波段探测率为7×10^10cmHz^1/2W^-1。并对器件性能进行了分析。

The fabrication and characterization of GaN-based 512×1 ultraviolet linear photodetector are reported in this work. AIGaN multilayers are grown in wetel-organic chemical vapor deposition （MOCVD）. Material etching, passivation, metal contact and other techniques are used in the manufacture of 256×1 back-illuminated A1GaN detector. The current-voltage （LV） curve shows that current at zero bias is 4.22×10^-12A and resistance is 1.01×10^10Ω. A flat band spectral response is achieved in the 305-365 rim. The detector displays an unbiased responsivity of 0. 12 A/W at 359 nm. This detector is bonded to a readout circuit with capacitive feedback transimpedance amplifier （CTIA） structure. Two modules are put together to form 512 linear ultraviolet focal plane arrays （FPA）. The FPA is measured in 300 K and achieved average voltage responsivity 1. 8×10^8 V/W, the blind rate 9.0 % and the response nonuniformities 17.8 %. The measurement of signal and noise led to a detectivity of 7×10^10 cmHz^1/2 W^-1 at 359 nm.