摘要
选用（ＮＨ４）３ＰＯ４作添加剂，生长了不同添加量的ＬＡＰ晶体．实验发现：添加（ＮＨ４）３ＰＯ４后，扩大了晶体生长的过饱和温区，抑制了杂晶的生长，提高了晶体利用率．
The effect of different quantities of additive (NH 4) 3PO 4 on the growth of LAP single crystal was studied in this paper. It was found during experiments that, supersaturate temperature region in which crystals grew was expanded, demands of temperature controlling were decreased, the growth of foreign crystals was effectively retrained. Improve the ratio of utilization.
出处
《哈尔滨师范大学自然科学学报》
CAS
1998年第4期81-84,共4页
Natural Science Journal of Harbin Normal University
关键词
添加剂
晶体生长
形貌
过饱和温区
LAP晶体
杂晶
Additive
LAP crystal growth
Morphology(of crystal)
Supersaturate temperature region
