氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

Effect of Ar/O_2 ratio on properties of ZnO film and development of ultraviolet photodetector

利用射频磁控溅射技术在SiO2／n—Si和玻璃衬底上制备ZnO薄膜，研究了溅射气体氩氧比对薄膜特性的影响，在氩氧比为2：3下所制备的ZnO薄膜c轴择优取向相对较好，薄膜的颗粒随氩氧比的增加而增大，所制备的薄膜在可见光均具有较高的透射率，吸收边在360-380nm附近；并在以SiO。／n—Si为衬底，氩氧比为2：3，经过退火处理的ZnO薄膜上制作Ag-ZnO—Ag肖特基MSM叉指结构的紫外探测器，所制作的探测器在5V偏压下漏电流为3．3×10^-8A，在紫外波段有较高的响应度，光响应度峰值在365nm附近。

ZnO films are deposited on SiO2/n-Si and glass by RF magnetron sputtering. The effect of Ar/O2 ratio on properties of ZnO film is studied. The ZnO film deposited under Ar/O2 （2：3） has a relatively better preferential c-axis orientation. The grain size augments with Ar/O2 ratio increasing. The films exhibit a high transmittance in visible region and have sharp fundamental absorption edge at about 360 - 380 nm. The interdigital metalsemiconductor-metal（ MSM ） ultraviolet （UV） photodetectors are fabricated by using Ag-ZnO-Ag as Schottky contact metal on the annealed ZnO films, which are deposited on SiO2/n-Si under Ar/O2 ratio （2 ： 3 ）. I-V characteristics of the MSM photodetector indicates that the leakage current is 3.3 × 10^-8A at a bias of 5 V. The photoresponsivity of the detector is high in the ultraviolet range and has a maximum value at about 365 nm.