摘要
磨削工艺被广泛应用于大直径Si衬底的制备中,而由磨削带来的Si片表面损伤及形貌对后续加工有较大的影响。利用扫描电子显微镜、粗糙度仪、喇曼光谱仪等工具对经过2000#、3000#、8000#砂轮磨削的Si片表面损伤层厚度及表面形貌进行了一系列测试,通过对测试数据的分析,得到了不同粒径磨削砂轮的优缺点,在此基础上提出了将传统单步磨削工艺优化为2000#磨削+8000#磨削的两步加工工艺,该工艺既可以保证较高的Si片表面质量,又具有较高的生产效率。
Grinding is used widely in wafer manufacture, surface damage and surface topography caused by grinding have great effect on latter process. SEM, roughness instrument and Raman spectroscopy were used for testing the damage layer thickness and surface topography of grinding wafer by 2000 # , 3000 # and 8000 # grinding wheel. The analysis of testing data shows the strongpoint and shortcoming of three kinds of grinding wheel. Based on the analysis, optimize grinding process from conventional one step grinding to two steps grinding （2000 # grinding ＋ 8000 # grinding） , both high surface quality and high throughput are got by this new process.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第12期1200-1204,共5页
Semiconductor Technology
基金
国家科技02重大专项(90nm/300mm)
硅片产品竞争力提升与产业化(2008ZX02401)
关键词
硅片
磨削
砂轮粒径
损伤层
表面形貌
silicon wafer
grinding
grain size
damage lay
surface topography
