摘要
采用GaAs肖特基二极管工艺,设计并制造了一款宽带无源双平衡混频器,射频、本振频率为1.5~3.7 GHz,变频损耗小于10 dB,本振到射频隔离度大于35 dB,中频带宽DC^0.8 GHz。该混频器采用了环形二极管和螺旋式巴伦结构,在获得良好的变频损耗与隔离度的同时,显著减小了芯片面积,整体芯片尺寸为1.2 mm×1.2 mm。
A broadband doubly-balanced mixers was designed and fabricated with GaAs Sehottky diode process. The mixer operates from 1.5 to 3.7 GHz, with conversion loss less than 10 dB and LO to RF isolation greater than 35 dB. The IF bandwidth is from DC to 0.8 GHz. The mixer employs ring diodes and spiral Balun structure for improving the conversion loss and port to port isolations. At one time, the chip size is reduced remarkably, only 1.2 mm × 1.2 mm.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第12期1220-1223,共4页
Semiconductor Technology
基金
国家重点基础研究发展计划资助项目(2009CB320200)
