摘要
采用射频溅射法在Si(001)基片上制备了CoFe2O4(CFO)薄膜,分别采用原子力显微镜(AFM)、X射线衍射仪(XRD)、振动样品磁强计(VSM)进行测试和分析。结果表明,随着退火温度的升高,晶粒逐渐增大,在600℃左右退火,晶粒长大受到抑制;Ms和Hc随退火温度的升高都是先增大后减小;薄膜晶粒大小和膜内晶格应力导致垂直膜面方向矫顽力大于平面方向矫顽力。在600℃退火,Hc⊥/Hc∥值达到了2.72,表明制备的CFO薄膜具有高度垂直各向异性。
CoFe2O4 （CFO） thin films were synthesized on Si （001） substrates by RF sputtering method. The surface appearance, mierostructure and magnetic properties of samples were measured and analyzed by atomic force microscope, X-ray diffraction and vibrating sample magnetometer, respectively. The results indicated that the grain sizes of the CFO thin films first increase slowly and then decrease with the increase of annealing temperature. Both Ms and Hc increase and then dect＇ease with the increase of annealing temperature. The grain size and lattice stress in the film cause the perpendicular coercivity larger than parallel coercivity, with Hc⊥/Hc∥ ratio of 2.72 for 600℃-annealed sample, which indicates that the CFO film has high perpendicular anisotropy.
出处
《磁性材料及器件》
CSCD
北大核心
2009年第6期19-21,54,共4页
Journal of Magnetic Materials and Devices
基金
国家重点基础研究发展计划(973)资助项目51613Z)
关键词
CoFe2O4薄膜
退火
结构
磁性能
CoFe2O4 thin films
annealing
microstructure
magnetic properties
