期刊文献+

Fe的不同掺杂量对ZnO薄膜光致发光的影响 被引量:3

The influence of different Fe doping on ZnO films' luminescence performance
下载PDF
导出
摘要 采用射频磁控溅射在玻璃衬底上制备了不同掺杂量的Fe-ZnO薄膜,分析不同掺杂量对薄膜光学性能的影响。利用X射线衍射仪(XRD)和原子力显微镜(AFM)研究Fe-ZnO薄膜的微观结构和形貌结构。Fe-ZnO薄膜光致发光(PL)性质的研究发现,发光峰主要有蓝光发射和绿光发射,蓝光发射主要是由于电子从导带向锌空位形成的浅受主能级上的跃迁;绿光发射是由于电子从氧空位到锌空位的能级跃迁及导带底到氧错位缺陷能级的跃迁。由透射谱和吸收谱分析,Fe-ZnO薄膜在可见光区的平均透过率为66%,掺杂量为2%Fe的薄膜的禁带宽度最接近于ZnO的禁带宽度。 Fe-ZnO films doped with different Fe doping are prepared on glass substrate by r. f. magnetron sputtering system. It is analyzed that the influence of different doping on its luminescence performance. The microstrucure and morphology of Fe-ZnO thin films are studied by X-ray diffraction(XRD) and atomic force microscope (AFM). The photoluminescence characteristics of Fe-ZnO show the blue luminescence peak and green luminescence peak. The blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy; The green emission corresponds to the electron transition from the oxygen vacancy to zinc vacancy and from the bottom of the conduction band to the local level composed of oxide misplaced defects. The transmission spectrum and absorption spectrum of Fe-ZnO show that Fe-ZnO films possess a average transmittance of about 66% in the visible region; the band gap of Fe-ZnO with 2% doping is close to the band gap of ZnO.
出处 《功能材料》 EI CAS CSCD 北大核心 2009年第12期1961-1963,1972,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(10874140) 甘肃省自然科学基金资助项目(0710RJZA105) 甘肃省高分子材料重点实验室开放基金资助项目(KF-05-03)
关键词 掺杂 光致发光 跃迁 透射 doping photoluminescence transition transmission
  • 相关文献

参考文献11

  • 1Xin Minjun, Chen Yiqing, et al. [J]. Materials Letters, 2008,62 : 2717-2720.
  • 2Lu Y M, Hwang W S,Liu W Y,et al. [J]. Mater Chem Phys, 2001,72 : 269-272.
  • 3Xu X L, Guo C X, Qi Z M,et al. [J]. Chem Phys Lett, 2002,364 : 57-63.
  • 4臧竞存,田战魁,刘燕行,迟静,邹玉林,魏建忠,叶建萍.溶胶-凝胶法制备ZnO薄膜的成核-生长和失稳分解研究[J].物理学报,2006,55(3):1358-1362. 被引量:10
  • 5石明吉,李清山,张宁,赵波,李修善.脉冲激光沉积法在多孔铝衬底上生长的ZnO薄膜的结构与光学性质[J].发光学报,2006,27(5):755-760. 被引量:5
  • 6Fu Zhuxi, Guo Changxin, Lin Bixia, et al. [J]. Chin Phys Lett, 1998,15 (6) : 457-459.
  • 7Vanheusden K,Seager C H,Warren W L,et al. [J]. Appl Phys Lett, 1996,68 (3) z 403-405.
  • 8Liu M, Kitai A H, Mascher P. [J]. Luminescence, 1992, 54:35-42.
  • 9Tuomisto F, Ranki V, Saarinen K. [J]. Phys Rev Lett, 2003,91(20) .1-4.
  • 10孙玉明.Cu掺杂氧化锌薄膜的发光特性研究[D].合肥:中国科学技术大学,2000.

二级参考文献21

  • 1宋洋,阎研,邢英杰,俞大鹏,张树霖.ZnO纳米管的拉曼光谱学研究[J].光散射学报,2004,16(2):103-106. 被引量:7
  • 2张东平,齐红基,邵建达,范瑞瑛,范正修.离子束溅射法薄膜生长中结瘤微缺陷的生长机理[J].物理学报,2005,54(3):1385-1389. 被引量:3
  • 3李卫华,许琦,尤明山,徐杰,常成,刘伟,刘丽,李保云,刘广田.小麦RIL群体中GMP含量的动态累积和净遗传增量的变化规律[J].作物学报,2006,32(5):779-784. 被引量:14
  • 4Nunes P,Malik A,Femandes B,et al.Influence of the doping and annealing atmosphere on zinc oxide thin film deposited by spray pyrolysis[J].Vacuum,1999,52(1):45-49.
  • 5Bagnal D M,Chen Y F,Shen M Y,et al.Room temperature stimulated emission from zinc oxide epilayers grown by plasma assisted MBE[J].J.Cryst.Growth,1998,184/185:605-609.
  • 6Monticone S,Tufeu R,Kanaev A V.Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles[J].J.Phys.Chem.B,1998,102(16):2854-2862.
  • 7Tang Z K,Wong G K L,Yu P.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystalite thin films[J].Appl Phys Lett,1998,72:3270-3274.
  • 8B.P.Zhang,K.Wakatsuki,N.T.Binh et al.Effects of growth temperature on thecharacteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition[J].Thin Solid Films,2004,499:12-19.
  • 9Hongxia Li,Jiyang Wang,Changhong Yang et al.Sol-gel preparation of transparent zinc oxide films with highly preferential crystal orientation[J].Vacuum,2004,77:57-62.
  • 10B.S.Li,Y.C.Liu,D.Z.Shen et al.Effects of RF power on properties of ZnO thin films growth on Si(001) substrate by plasma enhanced chemical[J].Journal of Crystal,2003,249:179-185.

共引文献21

同被引文献30

引证文献3

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部