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硅纳米孔柱阵列的场致电子发射 被引量：1

Field emission from silicon nanoporous pillar array
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摘要 测试了用水热技术制备的硅纳米孔柱阵列(silicon nanoporous pillar array(简称Si-NPA))的场致发射性能。测试结果显示,Si-NPA的开启电场为约1.48V/μm;在5V/μm的外加电场下,其发射电流密度为28.6μA/cm2;在外加电场4.4V/μm时,其电流浮动率为13%。Si-NPA发射性能增强的原因是由于其独特的表面形貌和结构所致。 Field emission from silicon nanoporous pillar array （Si-NPA） is studied. The results show that the Si- NPA turn-on field is about 1.48V/um, the emission current density of 28.6uA/cm^2 is obtained to be 5V/um, and the current fluctuation ratio is 13% at 4.4V/um. The enhanced field emission from Si-NPA is attributed to unique surface morphology and structure of Si-NPA.
作者 富笑男 符建华 罗艳伟 李坤 程莉娜 李新建
机构地区 河南工业大学理学院 郑州大学物理系
出处 《功能材料》 EI CAS CSCD 北大核心 2009年第12期2071-2073,2076,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(10574112) 河南省教育厅自然科学基金资助项目(2007140003) 河南工业大学科研基金资助项目(07XJC010) 河南工业大学博士基金资助项目(2007BS009)
关键词 硅纳米孔柱阵列 场致电子发射 纳米硅 多孔硅 silicon nanoporous pillar array（Si-NPA） field emission nano-silicon porous silicon
分类号 O462.4 [理学—电子物理学]
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参考文献27

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同被引文献28

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  • 6Ma Lian, Lin Zhixian, Zhang Yongai, et al. Large-scale growth of ultrathin MgO nanowires and evaluate their field emission properties[J]. Physica E: Low-dimensional Systems and Nanostructures, 2009,41 (8) : 1500-1503.
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  • 10Tan Huabing, Xu Ningsheng, Deng Shaozhi. Synthesis and electron emission properties of MgO nanowires[J]. Journal of Vacuum Science ： Technology B: Mieroelec- tronics and Nanometer Structures, 2010,28 (2) : C2B20- C2B23.

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功能材料
2009年 第12期

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