摘要
SiC MESFET由于其高击穿电压和低输出电容,适合用于设计E类功率放大器。设计了一种结构简单的微带线拓扑E类负载网络,可以匹配至标准电阻,且抑制高至5阶的谐波。用ADS软件进行电路仿真,在2.14 GHz频率点下,峰值功率附加效率(PAE)为70.5%,漏极效率可达80%,功率增益约为10 dB。
Silicon carbide （SIC） metal-semiconductor field effect transistors （MESFET） is a perfect choice for Class-E power amplifiers （PA） due to its high breakdown voltage and low output capacitance. A simple transmission-line Class-E load network was proposed, which could be matched to standard resistance and had a harmonic suppression up to the 5th order for maximum efficiency. Results from ADS （Advanced Design System） simulation showed that, at 2. 14 GHz, the circuit had a peak power added efficiency （PAE） of 70. 5%, drain efficiency of 80% and power gain of 10 dB.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第6期765-768,共4页
Microelectronics
基金
国家自然科学基金资助项目(60606022)
