摘要
提出了一种用于非挥发性存储器的新型电压灵敏放大器。该电路采用一种可以自动关断、电流可控的预充电路,可以有效消除由于存储容量变大带来的巨大位线寄生电容的影响,有效提高了灵敏放大器的读取速度。经验证,该结构具有较快的读取速度,在3.3 V工作电压下,电路读取时间为11 ns。
A new voltage sense amplifier for nonvolatile memory was proposed. In this circuit, an automatically switched precharge circuit with adjustable current was adopted, which improved read speed of the sense amplifier by eliminating great effects of bitline parasitic capacitance resulting from larger memory capacity. The sense amplifier was implemented on a flash memory for verification. Test results showed that the proposed structure had a faster access time, which is 11 ns at 3. 3 V operating voltage.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第6期815-818,共4页
Microelectronics