摘要
随着MOSFET器件的特征尺寸进入亚100 nm,传统自对准硅化物材料,如TiSi2和Co-Si2,由于其硅化物形成工艺的高硅耗、高形成热预算和线宽效应等特点,已不能满足纳米尺寸器件对硅化物材料的要求,显现出其作为自对准硅化物材料的局限性。NiSi与传统自对准硅化物材料相比,不但具有硅化物形成工艺的低硅耗和低形成热预算,而且具有低电阻率,又不存在线宽效应。所以,NiSi作为纳米尺寸器件最有希望的自对准硅化物材料得到广泛的关注和研究。综合介绍了镍硅化物特性,一硅化镍薄膜形成工艺及其工艺控制问题。
As the feature size of MOSFET is scaling down to sub-100 nm, traditional salicide materials, such as TiSi2 and CoSi2, can no longer satisfy the requirement of nano-scale device, due to their defects, including high silicon consumption, high heat budget of formation and line width effect. NiSi, which has low silicon consumption, low heat budget of formation, low resistivity and no linewidth effect, has been considered as the most promising candidate of salicide materials. Characteristics of Ni-Silicide, formation process of NiSi and optimization of the formation process were summarized.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第6期824-828,共5页
Microelectronics
