摘要
Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices （CCDs）. The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency （CTE） and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.
Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices （CCDs）. The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency （CTE） and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.
