利用发射电子法经由热灯丝CVD在Si(100)上合成局域异质外延金刚石膜

Heteroepitaxial Diamond Films Growth on Si(100) by Emission Electron Via Hot Filament CVD

本文利用发射电子法经由热灯丝ＣＶＤ在Ｓｉ（１００）上获得了局域异质外延金刚石膜。由Ｒａｍａｎ背散射强度（在１３３２ｃｍ－１处）旋转角依赖关系表明，金刚石膜与Ｓｉ（１００）的定向关系为ｄｉａ（１００）∥Ｓｉ（１００）和ｄｉａ〔１１０〕∥Ｓｉ〔１１０〕。在金刚石膜的成核阶段，位于衬底和灯丝之间的电极相对于灯丝施加一负偏压，获得的金刚石膜用扫描电镜和Ｒａｍａｎ谱表征。对实验结果进行了简要的讨论。

In this paper,heteroepitaxial diamond films were achieved on Si(100)substrates by emission electron via hot filament chemical vapor deposition. By measuring the angular dependence of Raman backscattering intensity at 1332cm -1 using plane polarized excitation of individual crystallites within the diamond films,the orientation relationship of diamond and Si(100)is diamond(100)∥Si(100) and diamond 110 ∥Si 110 .The electrodes located between the substrate and the filament were negatively biased relative to the filament during the nucleation stage.The films obtained were characterized by scanning electron microscope and Raman spectroscopy.The experimental results were briefly discussed.