硅/微晶玻璃阳极键合工艺对键合强度的影响

Influence of Silicon/Glass-ceramic Anodic Bonding Technology on Bonding Intensity

半导体硅与玻璃的阳极键合技术是微机电系统的关键封装技术,国内外普遍采用硼硅酸盐玻璃作为与硅片封装的阳极键合基片材料,封装温度高达500℃。实验采用Li2O-Al2O3-SiO2（LAS）系统微晶玻璃代替传统的硼硅酸盐玻璃,在200-400℃温度条件下实现了硅/微晶玻璃阳极键合,并分析了电压、温度、时间和压力等工艺参数对键合效果的影响,结果表明在250℃、500 V、10 min和0.5 MPa的条件下,微晶玻璃和硅片实现了良好键合。

Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system （MEMS）. Borosilicate glass is used as anodic bonding material which is packaged with silicon wafer; the bonding temperature is over 500 12. In this work, the Li2O-Al2O3-SiO2 （LAS） glass-ceramics were used to replace conventional borosilicate glass and anodic bonding experiments were carried through at the temperature ranging from 200--400 12. The technical parameters of anodic bonding which include voltage, temperature, time, pressure and bonding property were analyzed, the results showed that the glass-ceramies were well bonded to silicon at 250 12,500 V, 10 min and 0.5 MPa.