离心倾液法与初晶Si的生长

Decantation during Centrifugal Casting and the Growth of Primarg Silicon

本文首次提出了一种研究晶体生长的新方法———离心倾液法。用该方法获得了过共晶Ａｌ－Ｓｉ合金初晶的Ｓｉ的生长形貌，发现了初晶Ｓｉ存在位错台阶生长机制，并且，借助该生长机制成功地解释了初晶Ｓｉ的分枝和初晶Ｓｉ包裹共晶组织的形成机理。此外，观察到了共晶体包裹初晶Ｓｉ生长的过程。

A new method used to study crystal growth—called decantation during centrifugal casting,was suggested for the first fime.The morphology of primary silicon in hypereutectic Al-Si alloy were obtained by means of this method,and the growth mechanism by dislocation step was found for primary silicon.Furthemore,the formation mechanism on the branch of primary silicon and the structure of an eutectic wrapped in primany silicon were successfully explained by the growth mechanism of primary silicon.The growth process of an eutectic wrapping primary silicon was observed.