模拟计算低能重离子注入植物种子的深度

MONTE CARLO SIMULATION OF PENETRATION RANGE DISTRIBUTION OF ION BEAM WITH LOW ENERGY IMPLANTED IN PLANT SEEDS

采用Monte Carlo方法,模拟计算了能量在200keV的V+注入花生种子的深度-浓度分布。核碰撞能量损失采用经典的两体碰撞理论,电子能量损失用Lindhard-Scharff公式,对理论和实验结果的差异进行了分析,结果表明理论模型建立相对合理,为研究离子束与生物体之间的相互作用提供了理论基础。

The depth and density distribution of V ^＋ ion beam implanted into peanut seed is simulated by the Monte Carlo method. The action of ions implanted in plant seeds is studied by the classical collision theory of two objects, the electronic energy loss is calculated by Lindhard-Scharff formulation. The result indicates that the depth of 200keV V^＋ implanted into peanut seed is 5.57μm, which agrees with experimental results, and the model is appropriate to describe this interaction. This paper provides a computational method for the depth and density distribution of ions with low energy implanted in plant seeds.