摘要
研究了Spindt场发射阵列铝牺牲层工艺中不同硅基底类型对尖锥的影响,结果表明,在有栅极(Ti-W)和无栅极情况下,p-Si基底的场发射尖锥阵列都会被腐蚀破坏,而n-Si衬底的尖锥形貌完好。这是由于基底材料与尖锥材料之间形成的接触电位差,使高逸出功的p-Si基底与Mo尖锥形成Mo为阳极、p-Si为阴极而导致Mo尖锥被腐蚀;低逸出功n-Si基底则避免了这种现象的发生。
During the process of removing aluminum parting layer of Spindt-FEAs,the type of Si-substrate would affect the forming of FEA-tips. The study indicates that the morphology of n-Si FEA-tips are kept quite well,but the p-Si FEA-tips are destroyed both in the structure with gate electrode(Ti-W) and with- out gate. The contact potential difference exists between the substrate materials and the tip materials. Com- pared with Mo,the work function of p-Si is higher while the work function of n-Si is lower. As an anode material, Mo would be corrupted in the process of removing A1 parting layer when using p-Si piece. Conversely,Mo,as a cathode material here,would not be corrupted when the n-Si piece is used.
出处
《电子器件》
CAS
2009年第6期1011-1014,1018,共5页
Chinese Journal of Electron Devices
关键词
场发射阵列
硅片
牺牲层
腐蚀
逸出功
field emission arrays (FEA)
silicon piece
the parting layer
corrupt
work function