卢瑟福背散射谱和红外干涉反射谱研究冷注入锗离子对单晶硅的损伤

Damage of Crystal Silicon with Ge^+ Cool Implantation by Rutherford Backscattering Spectrometry and Infrared Interference Reflectance Spectra

主要研究锗离子在77 K温度下的冷注入对单晶硅片表面的预非晶化效果,并与室温注入情形予以对比。卢瑟福背散射谱(RBS)和红外干涉反射谱被用于对非晶层的研究。实验表明,冷注入要比室温注入的退沟道效应更为显著,反射率降低更为明显,意味着引入的损伤更为严重,更容易使硅单晶非晶化。而且,冷注入产生的最大损伤峰比室温注入的位于更深的位置,相应的非晶层/硅单晶衬底界面有更深的推入。结果还表明,同样的注入温度下,剂量越大,损伤越严重。

Ge ions were introduced to pre-amorphize silicon wafer surface by cool ion implantation method at 77 K. For comparison, the Ge-ion implanted silicon at room temperature also was prepared. The methods of RBS and infrared interference reflectance spectroscopy were applied to investigate the damage on Ge-im- planted silicon. It was observed that in the case of cool implantation, the de-channelling effect and the reduction of the reflectivity of the surface layer were more efficient than that of the room temperature implantation, even though less dose It could be meant that the cool implantation could introduce more serious damages than the room temperature implantation, that is to say, cool implantation amorphized the silicon more easily. The maximum damage peak in the cool implantation sample located the deeper position from the silicon surface. Accordingly, the interface between amorphous layer and the crystalline silicon substrate was pushed into the deeper position. It also was found that at the same target temperature, the more using dose, the more serious damage can be generated.