用于超宽带探地雷达的新型功率纳秒级开关

Novel Power Nanosecond Switches for UWB Ground Penetrating Radar

将高速断路开关与电感储能元件结合应用于功率脉冲产生系统中非常有前景,短时间内负载上产生的脉冲电压是储能元件电压的好几倍。在20世纪末期,发现了一种当电流从正向转至反向时,硅半导体PN结中出现高电压快速恢复现象,由此产生了一种新型固态等离子体断路开关漂移阶跃恢复二极管。这种开关具有长寿命、低抖动、高重频等优点。详细地分析了这种开关快恢复的物理特性,设计了基于此开关的发射机,可应用于探地雷达系统中。

High speed opening switches（OS） with inductive storage system are very promising in pulsed power applications. The pulsed voltage generated during a short time at the load may be many times higher than the voltage at which the energy has been stored. In the late 20th century a new effect of super fast voltage restoration in high voltage silicon PN junctions ,when the junction current is switched from forward to reverse direction, was discovered. The discovery gave rise to a new generation of solid state plasma opening switches,called Drift Step Recovery Diodes（ DSRD）, which has the advantage of long life time,tow jitter,and high repetition rate. The physical property of fast-recovery was analyzed in detail and transmitters based on it were designed, which can be applied in GPR system.