图形化硅纳米线阵列的制备

Preparation of the Patterning Silicon nanowires

本文主要研究了在常态(常温、常压等)条件下,利用金属催化化学腐蚀方法在硅片表面上大面积制备排列整齐、取向一致的硅纳米线阵列。同时,出于对后续制作硅纳米线传感器考虑,利用微电子标准加工工艺,以氮化硅做掩膜,通过选择合适的实验参数,在硅片表面选择性生长纳米线阵列,得到图形化的硅纳米线阵列。

Preparation of large area aligned identical silicon nanowires arrays by the metal catalyzed chemical etching method under normal conditions （room temperature, 1 atm） had been studied in this paper. And, in consideration of further silicon nanowires sensors, using a standard microelectronic process tech- nique, silicon nitride as mask, selective silicon nanowires on the silicon substrate were grown. Finally, patterned silicon nanowires arrays were gotten.