摘要
The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.
The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.
基金
supported by National Natural Science Foundation of China(Nos.10575074,10635010)
