硅电容传感器中静电封接工艺技术的应用

Application of Electrostatic Sealing Technology of Silicon Capacitance Sensor

对于新近发展起来的新一代结构型力敏器件,如硅电容力敏器件、电容型加速度力敏器件等,常规的静电封接工艺已无法满足其小间隙(间隙通常小于10μm)封接的特殊要求,封接后会造成极板间的粘连,导致器件失效。文中结合电容传感器的结构特点,提出了一种小间隙,非粘连的静电封接工艺方法,确定了相应的封接温度、封接电压、封接时间的选择原则,论述了容性器件封接中的相关问题。该工艺已成功地应用于硅电容传感器的制作中,效果良好,对于结构型力敏器件的制作具有较强的实用价值。

The small sealing space（less than 10 m） for the newly developed structural type of force sensor devices,such as silicon capacitance force sensor device and capacitive accelerometer force sensor device,the common electrostatic sealing technology can cause the adhesion between the plates which would damage the device.A new non-adhesion electrostatic sealing method for the small space was developed.The sealing temperature,sealing voltage and sealing time were determined.The other factors which affect capacitive device sealing quality were also discussed.This new sealing technology has been successfully applied in the production of the silicon capacitance sensor and it has strong practical value to the production of structural type of force sensitive devices.