摘要
Cupric oxide(CuO)is considered to be a promising material for photovoltaic applications.In this paper,p-CuO/n-Si junction solar cells were obtained by thermal oxidation of metallic copper films deposited on n-Si substrates at 400 ℃ for 5 h.X-ray diffraction patterns show that the as-prepared films are CuO with monoclinic crystalline structure.Hall effect measurement results show that CuO films are p-type conduction.A direct band-gap of ~1.57 eV for the CuO film is deduced from UV-Vis Absorbance spectra.Solar cells of Cu/p-CuO/n-Si/Al structure show that its photovoltaic behavior has a much wider spectrum response width compared with that of Si solar cells.In addition,the photocurrent of CuO/n-Si junction is investigated as a function of CuO film thickness,and it is found that the critical thickness for CuO on Si is about 250 nm.
Cupric oxide（CuO） is considered to be a promising material for photovoltaie applications. In this paper, p-CuO/n-Si junction solar cells were obtained by thermal oxidation of metallic copper films deposited on n-Si substrates at 400 ℃ for 5 h. X-ray diffraction patterns show that the as-prepared films are CuO with monoelinic crystalline structure. Hall effect measurement results show that CuO films are p-type conduction. A direct band-gap of -1.57 eV for the CuO film is deduced from UV-Vis absorbance spectra. Solar cells of Cu/p-CuO/n-Si/Al structure show that its photovoltaic behavior has a much wider spectrum response width compared with that of Si solar cells. In addition, the photocurrent of CuO/n-Si junction is investigated as a function of CuO film thickness, and it is found that the critical thickness for CuO on Si is about 250 nm.
基金
Chinese National Natural Science Foundation(60576063)
The Science and Technology Project of Zhejiang province(2008F70015)
