摘要
功率MOS晶体管的正向导通电阻是器件的重要指标,严重影响器件的使用可靠性。从封装材料、封装工艺等方面论述功率MOS管降低导通电阻、控制空洞、提高器件可靠性的封装技术,并通过一些实例来阐述工艺控制的效果。
The forward on-resistance of a VDMOS power transistor is an important parameter, which has a great effect on the device reliability. Several package techniques such as decreasing the on-resistance and controlling the voids in the solder layer to improve the reliability are discussed and illustrated with some actual examples in this paper.
出处
《电子产品可靠性与环境试验》
2009年第6期1-4,共4页
Electronic Product Reliability and Environmental Testing
