摘要
利用PC1D软件模拟了n+/p-p+结构的单晶硅太阳电池铝背场与硅片厚度对其输出特性的影响。结果表明,有铝背场时太阳电池获得明显的开路电压、短路电流以及光电转换效率的增益;硅片厚度越小,铝背场对其输出特性的影响越大;在有铝背场情况下,硅片厚度为120μm时,可获得最大的光电转换效率。
The PC1D was used to simulate the influence of Al-BSF and wafer thickness on electrical properties of n^+/p-p^+ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第6期838-841,共4页
Semiconductor Optoelectronics
基金
湖南省科技重大专项项目
长沙市科技计划重大专项项目
关键词
单晶硅太阳电池
铝背场
硅片厚度
输出特性
monocrystalline silicon solar cell
Al back-surface-field
wafer thickness
electrical properties