退火工艺对微波等离子制备氮杂二氧化钒的影响

Influence of Annealing Conditions on Properties of VO_(2-x)N_y Thin Films Prepared by Microwave Plasma

选用V2O5为前驱物,通过在玻璃片上镀膜,利用高纯氢作为气源、高纯氮作为掺杂物,采用微波等离子体增强法,在低温条件下合成了具有优良热致相变特性的氮杂二氧化钒(VO2-xNy)薄膜。经过退火工艺的处理,采用XRD、SEM、AFM和相变温度测试对样品进行表征,结果表明:退火后VO2-xNy薄膜的表面没有太大的变化,但是退火后样品表面有裂纹出现,薄膜的晶体颗粒大小呈现正态分布,颗粒尺寸较均匀。退火有利于增加其纯度,改善样品结晶度,晶体尺寸长大,并且样品的相变温度降低,幅度约为8℃。

Using V2O5 as molecular precursors, high pure hydrogen as the gass supply and high pure nitrogen as adulterant, VO2-xNy thin films with good thermal induced phase transition property were fabricated by synthesized at low temperature with microwave Plasma enhanced technology through coating films on glass slice. The yielded samples were characterized by X-ray Diffraction （XRD）,SEM,AFM and transformation temperature test. The results show that after annealling, the surfaces of VO2-xNy films do not have obvious change, while there are cracks appearing on the surfaces of the samples, the grains of thin films present normal distribution, and the dimension is quite uniform. Annealling can enhance the purity and advance the crystallinity of the thin films, meanwhile, the dimension of crystal grows up and the phase transition temperature of the samples decreases with a range of 8 ℃.