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基于0.18 μm CMOS工艺的功率放大器设计

Design of Power Amplifier for 0. 18 μm CMOS
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摘要 本文在系统分析功率放大器的结构、设计原理、性能指标的基础上,根据功率放大器的应用背景,选择A类放大器进行设计。设计时综合多种因素,合理选用共源共栅结构和共源结构的三阶差分放大电路,进行增益和输出功率分配,然后应用ADS软件进行设计、优化和仿真。仿真结果表明,设计的功率放大器在其工作频率范围绝对稳定,实现了很好的输入输出匹配,具有较好的线性度和隔离度,最终的仿真结果满足802.11a标准。采用TSMC 0.18μm CMOS工艺元件库,应用Caclence软件画出功率放大器电路的版图。 In this paper, on the basis of analyzing power amplifier's structure, design principle and performance, according to the application of power amplifier background, select the Class A amplifier to design, By applying synthesizing a number of factors, select third-order differential amplifier of caseode structure and co-source structure reasonably,to distribute gain and output power..Then use ADS software to design,optimize and simulate. The simulation results show that the power amplifier in the frequency range has absolute stability,reaches a very good input and output match ,obtains good linearity and isolation,the ultimate simulation results meet 802. 11 a standard. By using TSMC 0. 18 μm CMOS technology library, and Cadence software,draw the layout of the Power Amplifier circuits that have been completing design and simulation.
出处 《世界科技研究与发展》 CSCD 2009年第6期1088-1090,共3页 World Sci-Tech R&D
关键词 功率放大 CMOS工艺 ADS仿真 power amplification CMOS technology ADS simulation
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参考文献9

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