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面向汽车应用的功率半导体器件与封装 被引量:2

Power Semiconductor Devise and Packaging Advances Target Automotive Applications
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摘要 汽车电子技术不断发展,越来越多的新器件、新封装应用在汽车中,这对汽车用功率半导体器件与封装提出很大挑战。文章介绍了不同种类功率半导体器件的特点,具体分析了当前主要的汽车用功率器件的分类、结构、封装与可靠性,并给出这一领域的发展现状。期望通过本综述能为发展国内汽车用功率半导体器件提供更广阔的视野。 With automotive electronic technologies evolving,many new devises and new packginges are used for automotive,It is a great challenge to the power semiconductor devise and packaging advances target automotive applications.This paper introduces basic characters of several kinds of power semiconducter devises, and illustrates the classification,structures,packages and reliabilities of current power semiconducto devises for automotive application in details.And recent development on this area is presented.This paper provides valuable a wide field of vision for the realization of power semiconducto devise in automotive applications.
作者 龙乐
机构地区 龙泉天生路
出处 《电子与封装》 2009年第12期5-10,共6页 Electronics & Packaging
关键词 功率器件 汽车封装 功率密度 可靠性 power device package for automotive power density reliability
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  • 1姚丰,何杞鑫,方邵华.一种新型低压功率MOSFET结构分析[J].半导体技术,2005,30(11):53-56. 被引量:6
  • 2COLLINS H W,PELLY B.HEXFET,a new power technology cuts on-resistance,boots ratings[J].Electron Devices,1979,17(12):36.
  • 3UEDA D,TAKAGI H,KANO G.A new vertical power MOSFET structure with extremely reduced on-resistance[J].IEEE Trans Electron Devices,1985,32(1):2-6.
  • 4MATSUMOTO S,YOSHINO F,ISHII H.A 70 V,90 mΩ·mm^2,high-speed double-layer gate UMOSFET realized by selective CVD tungsten[C] // ISPSD.Davos,Switzerland,1994:365-369.
  • 5IN' T ZANDT M A A,HIJZEN E A,HUETING R J E,et al.Record-low 4 mΩ·mm^2 specific on-resistance for 20 V Trench MOSFETS[C]//ISPSD.Cambridge,UK,2003:32-35.
  • 6ZENG J.An ultra dense trench-gated power MOSFET technology using a self-aligned process[C]//ISPSD.Osaka,2001:147-150.
  • 7PEAKE S T,GROVER R,FAIR R,et al.Fully self-aligned power trench-MOSFET utilizing 1 mm pitch and 0.2 mm trench width[C]//ISPSD.Santa Fe,USA,2002:29-32.
  • 8PARK I Y,KIM S G,KOO J G,et al.Reduced cell pitch and on-resistance of trench MOSFET by employing source on trench sidewall[J].Electronics Letters,2003,39(19):1414-1415.
  • 9ONO S,KAWAGUCHI Y,NAKAGAWA A,et al.30 V new fine trench MOSFET with ultra low on-resistance[C] //ISPSD.Cambridge,UK,2003:28-31.
  • 10DARWISH M,YUE C,LUI K H,et al.W-gated trench power MOSFET(WFET)[J].IEEE Proc Circuits Devices Syst,2004,151(3):238-242.

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