0.13μm GGNMOS管的ESD特性研究

The ESD Characteristics Research of 0.13μm GGNMOS

当ESD事件发生时,栅极接地NMOS晶体管是很容易被静电所击穿的。NMOS器件的ESD保护机理主要是利用该晶体管的骤回特性。文章对NMOS管的骤回特性进行了详细研究,利用特殊设计的GGNMOS管实现ESD保护器件。文章基于0.13μm硅化物CMOS工艺,设计并制作了各种具有不同版图参数和不同版图布局的栅极接地NMOS晶体管,通过TLP测试获得了实验结果,并对结果进行了分析比较,详细讨论了栅极接地NMOS晶体管器件的版图参数和版图布局对其骤回特性的影响。通过这些试验结果,设计者可以预先估计GGNMOS在大ESD电流情况下的行为特性。

GGNMOS transistor is the most easy breakdown devise when ESD is happened. It＇s ESD protection mechanism based on their snapback characteristics, so it is necessary to analysis their snapback characteristics to design a GGNMOS device suitable for ESD. In this paper, the snapback characteristics of many gate-grounded NMOS （GGNMOS） devices with different device dimensions and layout floorplan have been discussed based on 0.13 μm technics. The results have been obtained from TLP test. Through analyzed the relations between snapback parameters and layout parameters have shown. From these results, the circuit designer can predict the behaviors of the GGNMOS devices under high ESD current stress.