二极管方程新的解析近似解

A New Analytic Approximation to General Diode Equation

提出了二极管方程一种新的解析近似解。使用精确的一阶及二阶微分和改进的牛顿-拉夫森方法,推导出一个简洁的二极管方程解析近似解。较之先前的二极管方程解法和近似,该解析近似解显著提高了二极管电流计算的精度和效率。同时,用户在将MOSFET模型如ACM、EKV和BSIM5中的二极管模型和反型层电荷模型实现到诸如SPICE等电路仿真模拟器中时,该解析近似解提供了高精度和高效率的计算方法。

This paper presents a new analytic approximation to the general diode equation with the presence of a series resistance. Using exact first and second-order derivatives and a modified Newton-Raphson formula, a concise analytic approximate solution is derived for the diode equation with the significant improvement on the accuracy and computation efficiency, thus it is very useful for users to implement the diode model and the inversion charge models in advanced MOSFET compact models such as ACM, EKV and BSIM5 into the circuit simulators, e. g. SPICE for circuit simulation and analysis.