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基于电荷泵法的N-LDMOS界面态测试技术研究 被引量：2

Technique Research of Measuring Interface-states Based on CP Method in N-LDMOS
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摘要 详细研究了高压N-LDMOS器件的电荷泵(CP)测试技术,指出了高压N-LDMOS器件的特殊结构对其CP测试结果的影响,并解释了高压N-LDMOS器件的CP曲线不饱和的原因,同时对由于不同的源漏偏压造成的高压N-LDMOS器件CP曲线的变化进行了深入的理论分析。这些结论可以为CP法测量界面态密度提供实验指导,同时为更加准确地分析高压LDMOS器件的CP测试曲线提供理论指导。 A measuring technique based on CP method for high voltage N-LDMOS is detailedly researched in this paper. The special configuration influences on CP measuring results of N-LDMOS and the unsaturated phenomena of CP curve are discussed in detail. At the same time, the change of CP curve in high voltage N-LDMOS which is caused by different reverse voltages is analyzed. These conclusions not only offer experimental instructions for measuring the density of interface-states with CP method but also give theoretic instructions for analyzing CP curve in high voltage N-LDMOS more accurately.
作者 刘斯扬 钱钦松 孙伟锋 李海松 时龙兴
机构地区 东南大学国家专用集成电路系统工程技术研究中心
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第4期597-601,605,共6页 Research & Progress of SSE
基金 江苏省自然科学基金支持项目(项目编号:BK2008287)
关键词 N型横向双扩散金属氧化物晶体管 电荷泵测试 热载流子 N-LDMOS CP measurements hot-carrier
分类号 TN386 [电子电信—物理电子学]
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参考文献8

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共引文献2

同被引文献24

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固体电子学研究与进展
2009年 第4期

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